Mfr. Part
MJD47T4G
Manufacturer
onsemi. Y-IC is a quality distributor of onsemi brand products and will provide customers with the best products and services.
Detailed Description
The MJD47T4G is an NPN bipolar junction transistor (BJT) with a maximum collector current of 1A and a collector-emitter breakdown voltage of 250V. It is designed for use in power amplifier, power switch, and power supply applications.
Key Features
NPN Bipolar Junction Transistor (BJT)
Maximum Collector Current: 1A
Collector-Emitter Breakdown Voltage: 250V
High DC Current Gain: Min. 30 @ 300mA, 10V
Wide Operating Temperature Range: -65°C to 150°C
Key Advantages
High power handling capability
Robust design for reliable operation
Suitable for a variety of power electronics applications
Packaging
Package Type: TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging Form: Tape & Reel (TR)
Lifecycle
The MJD47T4G is an active product. There are equivalent or alternative models available, such as the MJD44H and MJD44HT4G. If you need more information, please contact our sales team via our website.
Key Application Areas
Power amplifiers
Power switches
Power supplies
Other power electronics applications
Datasheet
The most up-to-date datasheet for the MJD47T4G is available on our website. We recommend that customers download the datasheet for the most authoritative information.
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